Nucleation and Surface Diffusion in Molecular Beam Epitaxy

摘要: Abstract Nucleation and surface diffusion in molecular beam epitaxy (MBE) are discussed this chapter, using III-V compound semiconductors as examples. Real-time detection of the nucleation is possible by monitoring intensity oscillation reflection high-energy electron diffraction (RHEED). Behavior MBE can be understood investigating growth on vicinal (stepped) RHEED oscillation. It shown that there two modes growth, two-dimensional step flow. High-resolution scanning microscope installed (microprobe-RHEED) makes it to measure local velocity real time with a spatial resolution less than 50 nm. This tool also conduct situ observation morphology change growing microstructures. In microstructure, between surfaces (intersurface diffusion) plays key role. The origin behavior intersurface described, during pyramid was observed time. theoretical analysis for formation shows agreement experiment fairly good. By employing fabricating required elimination lateral enhancement conducted. These techniques applied fabrication nanostructures microchannel high aspect ratios.