Transition Probability for Photoelectric Emission from Semiconductors

摘要: An adaptation of Makinson's theory photoelectric emission from metals is used to treat simple one- and three-dimensional semiconductor models. The probability excitation a state initial energy $\ensuremath{\epsilon}$ lying near ${\ensuremath{\epsilon}}_{0}$, the top an occupied band, found proportional ${\ensuremath{\epsilon}}_{0}\ensuremath{-}\ensuremath{\epsilon}$. Thus, transition vanishes at band. For density states having normal form, $n\ensuremath{\sim}{({\ensuremath{\epsilon}}_{0}\ensuremath{-}\ensuremath{\epsilon})}^{\frac{1}{2}}$, distribution emitted electrons contains factor ${({\ensuremath{\epsilon}}_{0}\ensuremath{-}\ensuremath{\epsilon})}^{\frac{3}{2}}$ thus concave upward band edge.For certain surfaces, threshold may be high because transitions requiring low are forbidden. It pointed out that this feature idealization probably not for real surfaces usual inevitable irregularities. In qualitative discussion, more realistic cases mentioned. suggested results retain form derived above, although disappears.An edge in good agreement with previous experimental on Te other monatomic semiconductors. With graphical methods analysis previously applied data these materials, point view taken above permits definite location edges bands. Improved estimates upper limits surface levels then possible.