CMOS compatible electrode materials selection in oxide-based memory devices

作者: V. Y.-Q. Zhuo , M. Li , Y. Guo , W. Wang , Y. Yang

DOI: 10.1063/1.4955044

关键词:

摘要: Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing top electrode material Ge to Cr Ta in Ta2O5-based resulted a reduction voltages current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows different scavenge oxygen ions Ta2O5 layer at various degrees, leading vacancy concentrations within Ta2O5, thus trends performance. Replacing Pt bottom with CMOS compatible (Ru Ir) further reduces power consumption can be attributed modification Schottky barrier height concentration electrode/oxide interface. Both performance EDX results c...

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