摘要: Abstract This paper reviews the recent experimental findings on atomic structures (001) surface of GaAs. We systematically studied structure and composition GaAs(001) surfaces using reflection high-energy electron diffraction, reflectance difference spectroscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy. found that As-rich c ( 4 × ) β , α (2×4), Ga-rich (6×6), 8 2 (4×6) reconstructions are formed critically depending preparation conditions. Atomic these will be discussed basis experiments first-principles calculations.
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