Structural studies of active carbon used in the growth of silicon carbide catalyst support
作者： M. Benaissa , J. Werckmann , G. Ehret , E. Peschiera , J. Guille
DOI: 10.1007/BF00356512
关键词:
摘要: The microstructure of active carbon used in the growth a silicon carbide catalyst support has been studied by BET area measurements, electron diffraction and high-resolution microscopy. is consistent with different distributions basic structural units (BSUs). These BSUs increase size under heat treatment forming adjacent distorted columns. Ordering processes are discussed from geometrical considerations based on reciprocal patterns. reactivity interface between SiO vapour controlled proportion highly reactive sites surface structure.
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