Identification of the first nucleated phase in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on silicon
作者： M. H. Wang , L. J. Chen
DOI: 10.1063/1.104608
关键词:
摘要: The first nucleated phase in ultrahigh vacuum deposited Ti thin films on silicon has been unambiguously identified utilizing high‐resolution transmission electron microscopy (HREM) conjunction with optical diffractometry. Ti5Si3 was found to form at the interface of overlayer and amorphous interlayer. For plan‐view specimens samples annealed 450 °C for 30 min, 1 2 h, all 15 silicide diffraction rings corresponding interplanar spacings longer than 0.098 nm could be attributed Ti5Si3. also only that match symmetry lattice HREM images. observation is consistent a kinetic model which predicts crystalline composition structure nearest interlayer will nucleated.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(21)
Norman G. Einspruch, Graydon B. Larrabee, Materials and Process Characterization ,(2014)
Peter Buseck, John Cowley, Leroy Eyring, High-Resolution Transmission Electron Microscopy: and Associated Techniques ,(1992)
William G. Moffatt, The handbook of binary phase diagrams Genium Pub. Co.. ,(1984)
Robert Beyers, Robert Sinclair, Metastable phase formation in titanium‐silicon thin films Journal of Applied Physics. ,vol. 57, pp. 5240- 5245 ,(1985) , 10.1063/1.335263
L. J. Chen, I. W. Wu, Sheet resistivity and transmission electron microscope investigations of BF+2 ‐implanted silicon Journal of Applied Physics. ,vol. 52, pp. 3310- 3318 ,(1981) , 10.1063/1.329151
Menachem Nathan, Solid phase reactions in free-standing layered M-Si (M= Ti, V, Cr, Co) films Journal of Applied Physics. ,vol. 63, pp. 5534- 5540 ,(1988) , 10.1063/1.340330
R. W. Bené, A kinetic model for solid-state silicide nucleation Journal of Applied Physics. ,vol. 61, pp. 1826- 1833 ,(1987) , 10.1063/1.338025
L. S. Hung, J. Gyulai, J. W. Mayer, S. S. Lau, M‐A. Nicolet, Kinetics of TiSi2 formation by thin Ti films on Si Journal of Applied Physics. ,vol. 54, pp. 5076- 5080 ,(1983) , 10.1063/1.332781
Ivo J. M. M. Raaijmakers, Ki‐Bum Kim, A comparison of the reaction of titanium with amorphous and monocrystalline silicon Journal of Applied Physics. ,vol. 67, pp. 6255- 6264 ,(1990) , 10.1063/1.345141
Ivo J. M. M. Raaijmakers, Piet H. Oosting, Alec H. Reader, A Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase Field MRS Proceedings. ,vol. 103, pp. 229- ,(1987) , 10.1557/PROC-103-229