Determination of the structure of GaAs(100)-S with chemical-state-specific photoelectron diffraction.
作者： ZH Lu , MJ Graham , None
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摘要: The chemical passivation of a semiconductor surface is an important step in electronic device manufacturing. This paper describes the application chemical-state-specific photoelectron diffraction to solve structure sulfur-passivated GaAs(100). results show that GaAs(100)-S terminated with ordered Ga-S-Ga bridge bonds [011] azimuth, and on top this disordered arsenic sulfide overlayer. Complex such as would not be resolved conventional techniques low-energy electron diffraction, x-ray-absorption near-edge structure, surface-extended fine-structure, or vibrational spectroscopies
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