作者: Ronnie Varghese , Hari Harikrishna , Scott T. Huxtable , W. T. Reynolds , Shashank Priya
DOI: 10.1021/AM500482R
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摘要: We demonstrate the use of time domain thermoreflectance (TDTR) technique towards understanding thermal transport in textured Pb(Zr,Ti)O3 (PZT) thin films grown by a sol-gel process on platinized silicon substrates. PZT were with preferred crystallographic orientations (100), (110), and (111). Grain orientation was controlled manipulating heterogeneous nucleation growth characteristics at interface between film underlying Pt layer substrate. TDTR used to measure both conductivity conductance as well that an Al evaporated surface. find hierarchical dependence observed differences conductances Al-PZT PZT-Pt interfaces for varying degree Thus, based upon nanoscale measurements can be delineate samples different orientations. The conductivities crystal range 1.45-1.80 W m(-1) K(-1). 30-65 MW m(-2) K(-1), while 90-120 These interfacial exhibit significant correlations texture elemental concentration densities those interfaces.