Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
作者： Kallista Sears , Hark Hoe Tan , Manuela Buda , Jenny Wong-Leung , Chennupati Jagadish
DOI: 10.1109/ICONN.2006.340664
关键词:
摘要: This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and lasing characteristics diode lasers incorporating either 3 or 5 stacked dot layers. Lasing occurred from excited state when 3-stacked layers were used. However into a device, increased gain volume enabled ground for cavity lengths as short 1.5 mm.
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