ESR of Free Radicals Trapped in Inert Matrices at Low Temperature: CH3, SiH3, GeH3, and SnH3
作者： Roger L. Morehouse , Jørn J. Christiansen , Walter Gordy
DOI: 10.1063/1.1727825
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摘要: The free radicals CH3, SiH3, GeH3, and SnH3 have been produced in a krypton matrix at 4.2°K by γ irradiation of the containing dilute concentrations CH4, SiH4, GeH4, SnH4. electron spin resonances indicate or restricted rotation for all matrix. Observed anisotropies g show that SnH3execute about an axis perpendicular to symmetry axis. From observed values rotating radicals, axially symmetric principal static are derived as follows: g∥ = 2.003, g⊥ 2.007; 2.017; SnH3, 2.025. Hyperfine structure caused 29Si is SiH3 with isotropic coupling constant Af 266 G anisotropic Aμ 24 G. These couplings reveal 22% scharacter orbital unpaired electron, which indicates radical nonplanar bond angles 110.6°. Probably GeH3 also nonplanar. magnitudes ...
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