Using double Hall sensor structure to greatly reduce voltage offset in epitaxial graphene

作者: S. El-Ahmar , W. Koczorowski , M. Oszwaldowski

DOI: 10.1063/1.5050376

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摘要: In this paper, we show that the very large offset voltage observed in Hall sensors exploiting epitaxial graphene on an SiC substrate can be reduced quite effectively with help of double sensor structure (DHSS). A record reduction by four orders magnitude to DC microvolt level is achieved. The strongly thermally stable, provided single DHSS have equal temperature coefficients resistance and heating/cooling procedure performed under isothermal conditions avoid generation thermoelectric voltages add offset.

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