Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy
作者： H.Ch Alt , A.Yu Egorov , H Riechert , B Wiedemann , J.D Meyer
DOI: 10.1016/S0921-4526(01)00442-2
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摘要: Abstract The nitrogen-related infrared absorption band at 471 cm−1 is found in the ternary and quaternary alloys GaAs1−xNx InyGa1−yAs1−xNx, respectively, grown by solid-source molecular beam epitaxy. Implantation experiments with isotopes 14N 15N show that due to a local vibrational mode of isolated nitrogen on arsenic site. strength layers correlates for x
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sci-hub.se 参考文章(22)
R. C. Newman, Infra-red studies of crystal defects ,(1973)
E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. T. Tozer, X. Wei, Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure Physical Review B. ,vol. 60, pp. 4430- 4433 ,(1999) , 10.1103/PHYSREVB.60.4430
T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, H. Temkin, Raman studies of nitrogen incorporation in GaAs1−xNx Applied Physics Letters. ,vol. 73, pp. 1409- 1411 ,(1998) , 10.1063/1.121959
B. Wiedemann, Klaus Bethge, H.C. Alt, Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide Materials Science Forum. pp. 867- 872 ,(1997) , 10.4028/WWW.SCIENTIFIC.NET/MSF.258-263.867
Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, R. H. Wu, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy Applied Physics Letters. ,vol. 77, pp. 214- 216 ,(2000) , 10.1063/1.126928
Markus Weyers, Michio Sato, Hiroaki Ando, Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Japanese Journal of Applied Physics. ,vol. 31, ,(1992) , 10.1143/JJAP.31.L853
Haruhiko Ono, Naoki Furuhata, Vibrational modes of carbon‐aluminum complexes in AlxGa1−xAs grown by metalorganic molecular beam epitaxy Applied Physics Letters. ,vol. 59, pp. 1881- 1883 ,(1991) , 10.1063/1.106176
V. Riede, H. Neumann, H. Sobotta, R. Schwabe, W. Seifert, S. Schwetlick, The Localized Vibrational Mode of Nitrogen in GaAs Physica Status Solidi (a). ,vol. 93, ,(1986) , 10.1002/PSSA.2210930250
D. G. Thomas, J. J. Hopfield, Isoelectronic Traps Due to Nitrogen in Gallium Phosphide Physical Review. ,vol. 150, pp. 680- 689 ,(1966) , 10.1103/PHYSREV.150.680
R Addinall, R Murray, R C Newman, J Wagner, S D Parker, R L Williams, R Droopad, A G DeOliveira, I Ferguson, R A Stradling, Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering Semiconductor Science and Technology. ,vol. 6, pp. 147- 154 ,(1991) , 10.1088/0268-1242/6/3/001