Atomic layer deposition of high-purity palladium films from Pd(hfac)2 and H2 and O2 plasmas
作者： Matthieu J. Weber , Adriaan J. M. Mackus , Marcel A. Verheijen , Valentino Longo , Ageeth A. Bol
DOI: 10.1021/JP5009412
关键词:
摘要: A plasma-assisted atomic layer deposition (ALD) process has been developed that allows for low temperature (100 °C) synthesis of virtually 100% pure palladium thin films with resistivity 24 ± 3 μΩ cm on oxide substrates. This is based Pd(hfac)2 (hfac = hexafluoroacetylacetonate) precursor dosing followed by sequential H2 plasma and O2 steps in a so-called ABC-type ALD process. Gas-phase infrared spectroscopy studies revealed the pulse required to remove carbon contaminants from Pd surface remain after reduction step. Omitting step, is, typical AB-like process, leads contamination >10% significantly higher values. From transmission electron microscopy, it also observed faster nucleation nanoparticles formed during initial stage film growth. As this novel depositio...
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