Dielectric relaxation and conduction mechanism in LaNi3/4M1/4O3 (M = Mo, W) at low temperature
作者： Alo Dutta , T.P. Sinha
DOI: 10.1016/J.JALLCOM.2010.10.012
关键词:
摘要: Abstract In order to investigate the electrical transport in LaNi 3/4 Mo 1/4 O 3 and W , dc conductivity dielectric properties these polycrystalline materials are investigated temperature range from 163 K 383 K frequency 50 Hz 1 MHz. The X-ray diffraction patterns of samples show monoclinic phase at room temperature. homogeneity is determined by energy dispersive analysis (EDAX) attached with a scanning electron microscope. dependence shows semiconducting nature materials. complex impedance plane plots that relaxation (conduction) mechanism purely bulk effect arising semiconductive grains. frequency-dependent data also analyzed framework ac formalism. spectra follow universal power law. activation energies required for conduction 0.143 0.165 eV LNM LNW respectively. scaling behaviour loss tangent suggests describes same various temperatures.
elsevier.com
sci-hub.se 参考文章(33)
Eisuke Iguchi, Woo Hwan Jung, Electrical Transports of LaFe1-xTixO3(x≤0.10) Journal of the Physical Society of Japan. ,vol. 63, pp. 3078- 3086 ,(1994) , 10.1143/JPSJ.63.3078
S. Komine, Dielectric relaxation study on Ce0.9Gd0.1O1.95 ceramics Physica B-condensed Matter. ,vol. 392, pp. 348- 352 ,(2007) , 10.1016/J.PHYSB.2006.12.001
Alo Dutta, T. P. Sinha, Santiranjan Shannigrahi, Dielectric relaxation and electronic structure of double perovskite Sr2FeSbO6 Journal of Applied Physics. ,vol. 104, pp. 064114- ,(2008) , 10.1063/1.2978218
W. H. Jung, E. Icuchi, Transition from hopping conduction to band conduction in LaFe x Ni1–x O3 Philosophical Magazine Part B. ,vol. 73, pp. 873- 891 ,(1996) , 10.1080/01418639608240320
W.H. Jung, H. Nakatsugawa, E. Iguchi, Electrical Transport in Semiconducting (LaMn1−xTix)1−γO3(x≤0.05) Journal of Solid State Chemistry. ,vol. 133, pp. 466- 472 ,(1997) , 10.1006/JSSC.1997.7511
S. Yamaguchi, Y. Okimoto, H. Taniguchi, Y. Tokura, Spin-state transition and high-spin polarons in LaCoO3. Physical Review B. ,vol. 53, ,(1996) , 10.1103/PHYSREVB.53.R2926
A. Chainani, M. Mathew, D. D. Sarma, Electron-spectroscopy study of the semiconductor-metal transition in La1-xSrxCoO3. Physical Review B. ,vol. 46, pp. 9976- 9983 ,(1992) , 10.1103/PHYSREVB.46.9976
A K Jonscher, Near-Debye dielectric responses Journal of Physics D. ,vol. 13, ,(1980) , 10.1088/0022-3727/13/5/005
George L. Trigg, Steven J. Rothman, Roy Benedek, Simon R. Phillpot, Encyclopedia of Applied Physics Physics Today. ,vol. 47, pp. 60- 62 ,(1994) , 10.1063/1.2808750
T. Arima, Y. Tokura, J. B. Torrance, Variation of optical gaps in perovskite-type 3d transition-metal oxides. Physical Review B. ,vol. 48, pp. 17006- 17009 ,(1993) , 10.1103/PHYSREVB.48.17006