Dielectric relaxation behavior of undoped, Ce-, and Cr-doped Sr0.5Ba0.5Nb2O6 at high temperatures
作者： Tsang-Tse Fang , Han-Yang Chung
DOI: 10.1063/1.3095599
关键词:
摘要: The dielectric relaxation behavior of undoped, Ce-, and Cr-doped Sr0.5Ba0.5Nb2O6 in the nondispersion region below Burns temperature [G. F. H. Dacol, Phys. Rev. B 28, 2527 (1983)] has been examined by equation e(T)=el[T/(T−Tc)] (e is constant, el high-frequency permittivity, T temperature, Tc a parameter high expansion constant) underlying Vugmeister’s theory [B. E. Vugmeister, 73, 174117 (2006)]. validity this justified, physical meaning also confirmed. variation with dopant content discussed.
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