Punching through device and its integration—Static induction transistor
作者： T. Ohmi
关键词:
摘要: Static induction transistor (SIT) having a short-channel structure is characterized by small gate capacitance, high transconductance, and nonsaturation current-voltage characteristic. The major mechanism of current transport in SIT majority-carrier injection due to barrier height control at the intrinsic channel. When channel completely pinched off gate-to-channel built-in voltage junction-gate (JSIT), there appears normally-off SIT. In forward bias operation JSIT, which called bipolar mode (BSIT), switching speed far more improved from conventional JSIT. BSIT exhibits saturation BSIT, drain for onset lower than that density very high, leading characteristics low impedance, gain. Applications LSI are discussed especially concentrating on BSIT. logic circuit (SITL) containing short propagation delay time power dissipation promising future development VLSI.
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sci-hub.se 参考文章(14)
W. Shockley, A Unipolar "Field-Effect" Transistor Proceedings of the IRE. ,vol. 11, pp. 1365- 1376 ,(1952) , 10.1109/JRPROC.1952.273964
J. Nishizawa, T. Terasaki, A low impedance field effect transistor 1972 International Electron Devices Meeting. pp. 144- 144 ,(1972) , 10.1109/IEDM.1972.249362
Hiroyuki Tango, Jun-Ichi Nishizawa, Potential, field and carrier distribution in the channel of junction field-effect transistors Solid-State Electronics. ,vol. 13, pp. 139- 152 ,(1970) , 10.1016/0038-1101(70)90044-4
G.W. Taylor, Subthreshold conduction in MOSFET's IEEE Transactions on Electron Devices. ,vol. 25, pp. 337- 350 ,(1978) , 10.1109/T-ED.1978.19079
J. Nishizawa, T. Ohmi, T. Nonaka, Y. Mochida, Approaches to high performance SITL IEEE Journal of Solid-state Circuits. ,vol. 14, pp. 873- 875 ,(1979) , 10.1109/JSSC.1979.1051288
Y. Mochida, J. Nishizawa, T. Ohmi, R.K. Gupta, Characteristics of static induction transistors: Effects of series resistance IEEE Transactions on Electron Devices. ,vol. 25, pp. 761- 767 ,(1978) , 10.1109/T-ED.1978.19167
Jun-ichi Nishizawa, Tadahiro Ohmi, Yasunori Mochida, Takeshi Matsuyama, Bipolar Mode Static Induction Transistor Japanese Journal of Applied Physics. ,vol. 19, pp. 289- ,(1980) , 10.7567/JJAPS.19S1.289
J. Nishizawa, T. Ohmi, Y. Mochida, T. Matsuyama, S. Iida, Bipolar mode static induction transistor (BSIT)—High speed switching device 1978 International Electron Devices Meeting. pp. 676- 679 ,(1978) , 10.1109/IEDM.1978.189509
J.L. Chu, G. Persky, S.M. Sze, Thermionic injection and space‐charge‐limited current in reach‐through p+np+ structures Journal of Applied Physics. ,vol. 43, pp. 3510- 3515 ,(1972) , 10.1063/1.1661745
J. Nishizawa, B. Wilamowski, Integrated logic - Static induction transistor logic international solid-state circuits conference. pp. 222- 223 ,(1977) , 10.1109/ISSCC.1977.1155728