Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band.

摘要: Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor dots (QD) have been proven to be prospective candidates. However, their practical use fiber-based communication depends heavily on possibility operation telecom bands at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study single QD emission single-photon from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes vicinity act as reservoir carriers can exploited enhance photoluminescence trion states observed elevated up least 80 K. The luminescence quenching is mainly related promotion higher valence band aspect must primarily addressed order further increase thermal stability emission. Photon autocorrelation measurements yield with purity $${g}_{50K}^{(2)}\left(0\right)=0.13$$ 50 K. Our results imply these nanostructures very promising candidates for elevated (e.g., Stirling cryocooler compatible) O-band highlight means improvements performance.