作者: Haoran Zhang , Yanhui Zhang , Bin Wang , Zhiying Chen , Yanping Sui
DOI: 10.1007/S11664-014-3415-8
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摘要: Analysis of graphene domain synthesis explains the main growth process. Size-limited caused by hydrogen is studied to achieve efficient synthesis. Graphene on Cu foils via chemical vapor deposition method using methane as carbon source limited high concentration. Results indicate that affects nucleation, rate, and final size. Considering role both activator etching reagent, we build a model explain cause this low rate for partial pressure. A two-step proposed control nucleation separately. Half time required obtain similar size compared with single-step synthesis, indicating improved efficiency. The change pressure transmission between two steps factor cannot be ignored growth.