作者: W. A. Harrison , E. A. Kraut , J. R. Waldrop , R. W. Grant
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摘要: A study of heterojunction interface geometry based on our measured differences in 3 d core-state binding energies for germanium and gallium at Ge-GaAs heterojunctions of different crystallographic orientations is reported. For the interfaces which have been studied, ie,(110),(100) Ga,(100) As,(111) Ga, and (1 1 1) As, orientation-dependent variations in dipole contributions to valence-band discontinuities of about 0.2 eV have been observed. From electrostatic considerations we deduce the simplest interface geometries consistent …