Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
作者： Masato Uchida , Takashi Ajima , Toshio Yonezawa
DOI:
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摘要: A semiconductor device comprising a substrate and protective films formed thereon. The comprise at least one silicon carbide film which may be pure or contain particular impurities.
lens.org 参考文章(16)
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