作者: Peng Li , M Y Sun , C Jin , H L Bai
DOI: 10.1088/0022-3727/45/50/505001
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摘要: Six-fold anisotropic magnetoresistance (AMR) was observed in epitaxial Fe3O4(1 1 1) films on conductive ZnO (0 0 0 1), while the current flowed perpendicularly to film plane and magnetic field rotated plane, demonstrating close relation between AMR magnetocrystalline anisotropy. The spin injection efficiency of Fe3O4 modulated from 60% 20% with increasing underlayer surface roughness through changing sputtering pressure. Larger is higher efficiency. Under induction a fields along easy axis, it supposed that scattering carriers by noncollinear moments near antiphase boundaries weaker for