Improved barrier parameters and working stability of Au/p-GO/n-lnP/Au–Ge Schottky barrier diode with GO interlayer showing resistive switching effect
作者： Ali Baltakesmez
DOI: 10.1016/J.VACUUM.2019.108825
关键词:
摘要: … In this study, n-lnP based Schottky barrier devices were prepared using the GO interlayer … of Au/GO/n-lnP/Au–Ge as working diode structure. Reference diode Au/n-lnP/Au–Ge and the …
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