Luminescence of copper-aluminum diselenide
作者： V. A. Savchuk , B. V. Korzun , N. A. Sobolev , L. A. Makovetskaya
DOI: 10.1134/1.1187135
关键词:
摘要: The results of a multifaceted investigation the luminescence properties single crystals copper-aluminum diselenide CuAlSe2 are presented. spectrum undoped this compound with homogeneous composition was found to have complex structure. were modified by annealing in various atmospheres. nature radiative transitions semiconductor analyzed.
springer.com
sci-hub.se 参考文章(8)
B. V. Korzoun, L. A. Makovetskaya, V. A. Savchuk, V. A. Rubtsov, G. P. Popelnyuk, A. P. Chernyakova, T(x) phase diagram of the Cu 2 Se-Al 2 Se 3 system Journal of Electronic Materials. ,vol. 24, pp. 903- 906 ,(1995) , 10.1007/BF02653339
J. N. Murrell, S. F. A. Kettle, John M. Tedder, The chemical bond ,(1978)
I. A. Aksenov, I. R. Gulakov, V. I. Lipnitskii, A. I. Lukomskii, L. A. Makovetskaya, Cathodoluminescence and electrical properties of CuAlS2 Physica Status Solidi (a). ,vol. 115, ,(1989) , 10.1002/PSSA.2211150166
S. Chichibu, M. Shishikura, J. Ino, S. Matsumoto, Electrical and optical properties of CuAlSe2grown by iodine chemical vapor transport Journal of Applied Physics. ,vol. 70, pp. 1648- 1655 ,(1991) , 10.1063/1.349531
M. Bettini, Reflection measurements with polarization modulation: A method to investigate bandgaps in birefringent materials like I-III-VI2 chalcopyrite compounds Solid State Communications. ,vol. 13, pp. 599- 602 ,(1973) , 10.1016/S0038-1098(73)80021-3
S. V. Popov, Yu. P. Svirko, L. A. Makovetskaya, A. S. Semenikhin, V. A. Tarasenko, N. I. Zheludev, Intensity-activated birefringence zero-crossing shift in CuAlSe 2 crystal Optics Letters. ,vol. 15, pp. 993- 995 ,(1990) , 10.1364/OL.15.000993
Nobuyuki Yamamoto, Photoluminescences and Excitation Spectra of Some I-III-VI2Compounds Japanese Journal of Applied Physics. ,vol. 15, pp. 1909- 1914 ,(1976) , 10.1143/JJAP.15.1909
H. Neumann, Influence of intrinsic defects on the electrical properties of AIBIIIC2VI compounds Crystal Research and Technology. ,vol. 18, pp. 483- 490 ,(1983) , 10.1002/CRAT.2170180409