Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films
作者： X.G. Fang , S.X. Lin , A.H. Zhang , X.B. Lu , X.S. Gao
DOI: 10.1016/J.SSC.2015.06.017
关键词:
摘要: Abstract Polarization switching and energy storage properties of a series Pb 0.97 La 0.02 Zr 0.95 Ti 0.05 O 3 (PLZT) thin films deposited on (100)-textured LaNiO (LNO)-buffered Si substrates (111)-textured Pt/Ti/SiO 2 /Si were investigated. It was revealed that the PLZT LNO-buffered prefer (100) textured structure, while orientation Pt-coated is random. With respect to substrates, have bigger compressive residual stress, larger electrical polarization, better dielectric properties, performances. For (100)-orientated films, density ( W s ) efficiency η measured at room temperature are about 15.3 J/cm 56% respectively. Moreover, frequency stability in range from 20 Hz 10 kHz, 25 270 °C demonstrated films. These results indicate with LNO bottom electrode could be potential candidate for applications high capacitors.
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Beihai Ma, Shanshan Liu, Sheng Tong, Manoj Narayanan, Rachel E Koritala, Zhongqiang Hu, Uthamalingam Balachandran, Residual stress of .Pb 0:92 La 0:08 / .Zr 0:52 Ti 0:48 /O 3 films grown by a sol-gel process Smart Materials and Structures. ,vol. 22, pp. 055019- ,(2013) , 10.1088/0964-1726/22/5/055019
Meysam Sharifzadeh Mirshekarloo, Kui Yao, Thirumany Sritharan, Large strain and high energy storage density in orthorhombic perovskite (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 antiferroelectric thin films Applied Physics Letters. ,vol. 97, pp. 142902- ,(2010) , 10.1063/1.3497193
Xihong Hao, Jiwei Zhai, Xiujian Chou, Xi Yao, The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode Solid State Communications. ,vol. 142, pp. 498- 503 ,(2007) , 10.1016/J.SSC.2007.03.048
Manoj Narayanan, Mengchun Pan, Shanshan Liu, Sheng Tong, Seungbum Hong, Beihai Ma, Uthamalingam Balachandran, Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films RSC Advances. ,vol. 2, pp. 11901- 11907 ,(2012) , 10.1039/C2RA20678A
Kun An, Peiqing Li, Donghong Chen, Xiujian Chou, Chenyang Xue, Jun Liu, Wendong Zhang, Phase transition current of antiferroelectric (Pb0.97La0.02)(Zr0.95Ti0.05)O3 thick films under thermo-electric coupled field Solid State Communications. ,vol. 180, pp. 64- 67 ,(2014) , 10.1016/J.SSC.2013.11.018
Jun Ge, Xianlin Dong, Ying Chen, Fei Cao, Genshui Wang, Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes Applied Physics Letters. ,vol. 102, pp. 142905- ,(2013) , 10.1063/1.4801517
Xihong Hao, Jiwei Zhai, Ling Bing Kong, Zhengkui Xu, A comprehensive review on the progress of lead zirconate-based antiferroelectric materials Progress in Materials Science. ,vol. 63, pp. 1- 57 ,(2014) , 10.1016/J.PMATSCI.2014.01.002
Beihai Ma, Shanshan Liu, Sheng Tong, Manoj Narayanan, U. (Balu) Balachandran, Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress Journal of Applied Physics. ,vol. 112, pp. 114117- ,(2012) , 10.1063/1.4768926
Xihong Hao, Zhenxing Yue, Jinbao Xu, Shengli An, Ce-Wen Nan, Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films Journal of Applied Physics. ,vol. 110, pp. 064109- ,(2011) , 10.1063/1.3641983
Xin Li, Jiwei Zhai, Haydn Chen, (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thin films grown on LaNiO3-buffered and Pt-buffered silicon substrates by sol-gel processing Journal of Applied Physics. ,vol. 97, pp. 024102- ,(2005) , 10.1063/1.1834730