Cathodoluminescence Microanalysis of the Defect Microstructures of Bulk and Nanoscale Ultrapure Silicon Dioxide Polymorphs for Device Applications

摘要: Cathodoluminescence (CL) techniques have been used to investigate the defect structures of a variety bulk and nanoscale ultrapure synthetic silicon dioxide (SiO2) polymorphs. CL microanalysis in an electron microscope enables detection centers with high sensitivity spatial resolution. The microstructures pure polymorphs systematically analyzed using techniques: SiO2 can be challenging as their structure may modified by irradiation. Bulk crystal amorphous SiO2, surface layers (ranging between 50–900 nm thick) on situ buried (synthesized oxygen ion implantation temperature annealing processes) investigated characteristic defects determined compared. emission from is generally related local point tetrahedrally coordinated host lattice. emissions associated non bridging defects, deficient radiative recombination self trapped exciton are observed thermal thin films very low concentrations substitutional Aluminium impurities also specimens Type I II a-SiO2. In contrast, dominated Si–SiO2 interfaces Si nanoparticles which form during synthesis.