Dynamic $\mathrm{R}_{\mathrm{ON}}$ in $\beta$ -Ga 2 O 3 MOSFET Power Devices

摘要: The reliability of field-plated $\beta$ -Ga 2 O 3 power MOSFETs is investigated by means transient-current measurements. Both steady state and pulsed high bias, gate-drain stresses are applied to the devices change recovery in RON, attributed electron trapping, monitored. Surprisingly, trapping completely suppressed during pulsed-stress measurements, whereas long-duration, bias stress leads a dramatic increase device RON. Long-duration more representative real-world operation, so this result highlights key challenge commercialisation new technology.