Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study
作者： K.M. Lee , J.Y. Hwang , B. Urban , A. Singh , A. Neogi
DOI: 10.1016/J.SSC.2014.11.020
关键词:
摘要: Abstract As-grown by chemical vapor deposition (CVD) technique, 3C-silicon carbide (3C-SiC) nanowires (NWs) were studied for their energy states photonic interactions. Temperature dependent photoluminescence (TDPL) was employed in the study. High emissions UV range found. In order to better understand origins of high emissions, a time resolved (TRPL) study executed manifest nature these emissions. Observation with resolution transmission electron microscopy (HRTEM) confirmed due oxide formed on outer surface NWs.
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