Thermal conductivity and electrical resistivity of the layered compound Nb1−xSnxSe2

摘要: The thermal conductivity λ(x=0,0.15,0.3,0.6;T=2–200 K) and electrical resistivity ρ(0⩽x⩽0.5;T=6–300 of layered crystals Nb1−xSnxSe2 are measured in the ab plane. metal– semiconductor transition is observed at x≈0.5. magnitude anomaly 33 K associated with a to charge density wave phase increases increasing x for x>0.15. metallic samples (x 90K, which accord nonlinearity ρ(T) dependence. absence such an increase λ(T) semiconducting sample indicates that this singularity connected electronic subsystem. nonmonotonicity ρ(x) dependence may be existence sharp peak electron states near Fermi level. Approximation reveals phonon scattering mechanism relaxation rate proportional square frequency.