Structural defect-dependent resistive switching in Cu-O/Si studied by Kelvin probe force microscopy and conductive atomic force microscopy
作者： Mohit Kumar , Tapobrata Som
DOI: 10.1088/0957-4484/26/34/345702
关键词:
摘要: In this study, we show structural defect-dependent presence or absence of resistive switching in Cu-O films. We use Kelvin probe force microscopy and conductive atomic to the switching. addition, local current mapping provides direct evidence on formation nanoscale filament. These findings match well with existing theoretical model particular, understanding role defects can be considered as critically important take a step forward for designing advanced memory devices.
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