Controlled synthesis of single-crystal SnSe nanoplates

作者: Shuli Zhao , Huan Wang , Yu Zhou , Lei Liao , Ying Jiang

DOI: 10.1007/S12274-014-0676-8

关键词:

摘要: Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great …

参考文章(39)
Ajay Agarwal, M. N. Vashi, D. Lakshminarayana, N. M. Batra, Electrical resistivity anisotropy in layered p-SnSe single crystals Journal of Materials Science: Materials in Electronics. ,vol. 11, pp. 67- 71 ,(2000) , 10.1023/A:1008960305097
Li-Dong Zhao, Shih-Han Lo, Yongsheng Zhang, Hui Sun, Gangjian Tan, Ctirad Uher, C. Wolverton, Vinayak P. Dravid, Mercouri G. Kanatzidis, Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals Nature. ,vol. 508, pp. 373- 377 ,(2014) , 10.1038/NATURE13184
H. Maier, D. R. Daniel, SnSe single crystals: Sublimation growth, deviation from stoichiometry and electrical properties Journal of Electronic Materials. ,vol. 6, pp. 693- 704 ,(1977) , 10.1007/BF02660344
Ming-Zhe Xue, Jia Yao, Sun-Chao Cheng, Zheng-Wen Fu, Lithium electrochemistry of a novel snse thin-film anode Journal of The Electrochemical Society. ,vol. 153, ,(2006) , 10.1149/1.2139871
Anthony Ayari, Enrique Cobas, Ololade Ogundadegbe, Michael S. Fuhrer, Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides Journal of Applied Physics. ,vol. 101, pp. 014507- ,(2007) , 10.1063/1.2407388
Haijun Zhang, Chao-Xing Liu, Xiao-Liang Qi, Xi Dai, Zhong Fang, Shou-Cheng Zhang, Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface Nature Physics. ,vol. 5, pp. 438- 442 ,(2009) , 10.1038/NPHYS1270
Dongwoo Chun, R. M. Walser, R. W. Bené, T. H. Courtney, Polarity‐dependent memory switching in devices with SnSe and SnSe2 crystals Applied Physics Letters. ,vol. 24, pp. 479- 481 ,(1974) , 10.1063/1.1655019
M. Cardona, H. R. Chandrasekhar, R. G. Humphreys, U. Zwick, Infrared and Raman spectra of the IV-VI compounds SnS and SnSe Physical Review B. ,vol. 15, pp. 2177- 2183 ,(1977) , 10.1103/PHYSREVB.15.2177
A. K. Geim, K. S. Novoselov, The rise of graphene Nature Materials. ,vol. 6, pp. 183- 191 ,(2007) , 10.1038/NMAT1849
Kin Fai Mak, Changgu Lee, James Hone, Jie Shan, Tony F. Heinz, Atomically thin MoS2: a new direct-gap semiconductor Physical Review Letters. ,vol. 105, pp. 136805- ,(2010) , 10.1103/PHYSREVLETT.105.136805