Design and optimization of a low voltage RF switch MEMS capacitance using genetic algorithm and Taguchi method
作者： Alireza Ardehshiri , Gholamreza Karimi , Ramin Dehdasht-Heydari
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摘要: This paper aims to design, optimize and simulate the Radio Frequency (RF) micro electromechanical system (MEMS) Switch which is stimulated by electrostatically voltage.,The geometric structure of switch was extracted based on design Taguchi-based experiment using mathematical programming obtaining objective function genetic meta-heuristic algorithm.,The RF parameters were calculated for S11 = −5.649 dB S21 −46.428 at working frequency 40 GHz. The pull-in voltage 2.8 V axial residual stress proposed obtained 28 MPa −4.422 −48.705dB 2.5 V 25 MPa.,A novel complex strategy in optimization capacitive MEMS modeling proposed.
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