Numerical Simulation of Semiconductor Crystal Growth by Directional Melt Solidification
作者： V. A. Goncharov
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摘要: A new method is suggested for solving the Stefan problem crystal growth by directional solidification. The treated as an essentially unsteady one. conditions ensuring a constant rate and controllability of shape crystallization front are found. observed calculated data in satisfactory agreement. effect oscillating external force on melt that initiates macrosegregation analyzed. It demonstrated fluctuations cause formation transverse striations. radial inhomogeneity investigated.
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sci-hub.se 参考文章(6)
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