Carrier lifetime versus anneal in low temperature growth GaAs
作者： E. S. Harmon , M. R. Melloch , J. M. Woodall , D. D. Nolte , N. Otsuka
DOI: 10.1063/1.110542
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摘要: The photoexcited carrier lifetimes in ex situ‐annealed low temperature growth GaAs are measured with a femtosecond transient absorption experiment. study encompassed two films approximately 0.3% and 0.9% excess arsenic incorporated during growth. observed found to be function of the spacing precipitates formed 30 s anneals temperatures between 650 1000 °C. lifetime for unannealed was less than ∼200 fs. increased from ∼2 ∼10 ps as average precipitate ∼400 ∼900 A. These results sharp contrast recent reports subpicosecond similar annealed at 600 °C.
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