Raman scattering studies of oxygen implanted CdS thin films prepared by vacuum evaporation
作者： K.L Narayanan , K.P Vijayakumar , K.G.M Nair , B Sundarakkannan , R Kesavamoorthy
DOI: 10.1016/S0168-583X(99)00602-3
关键词:
摘要: CdS thin films prepared by vacuum evaporation method were implanted with oxygen ions at the energy of 80 keV to different doses. Raman scattering studies as-deposited and reveal shift in peak position A1(LO) mode towards higher wave number on implantation. The area under increases dose initially, then decreases numbers has been attributed replacement sulphur atoms lighter atoms.
harvard.edu
elsevier.com
sci-hub.se 参考文章(13)
S. Ushioda, Defect-activated first order Raman scattering in boron implanted GaAs☆ Solid State Communications. ,vol. 15, pp. 149- 153 ,(1974) , 10.1016/0038-1098(74)90729-7
N. P. Kekelidze, Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons Radiation Effects and Defects in Solids. ,vol. 32, pp. 113- 119 ,(1977) , 10.1080/00337577708237465
Kh. A. Mady, Z. S. Moustafa, M. S. Selim, A. A. Gabr, Damage to ZnS films due to nitrogen ion bombardment Journal of Materials Science. ,vol. 23, pp. 2403- 2406 ,(1988) , 10.1007/BF01111895
A. K. Arora, V. Umadevi, Instrumental Distortions of Raman Lines Applied Spectroscopy. ,vol. 36, pp. 424- 427 ,(1982) , 10.1366/0003702824639682
P. S. Peercy, RAMAN SCATTERING OF ION‐IMPLANTED GaAs Applied Physics Letters. ,vol. 18, pp. 574- 576 ,(1971) , 10.1063/1.1653546
Y. Shiraki, T. Shimada, K. F. Komatsubara, Ion Implantation of Nitrogen into Cadmium Sulfide Journal of Applied Physics. ,vol. 43, pp. 710- 718 ,(1972) , 10.1063/1.1661181
Fred Chernow, Graeme Eldridge, Guy Ruse, Lars Wåhlin, HIGH CONDUCTIVITY p‐TYPE CdS Applied Physics Letters. ,vol. 12, pp. 339- 341 ,(1968) , 10.1063/1.1651843
N. R. Parikh, D. A. Thompson, G. J. C. Carpenter, Ion implantation damage in CdS Radiation Effects and Defects in Solids. ,vol. 98, pp. 289- 300 ,(1986) , 10.1080/00337578608206119
T. Nakamura, T. Katoda, Raman spectra from Si and Sn implanted GaAs Journal of Applied Physics. ,vol. 53, pp. 5870- 5872 ,(1982) , 10.1063/1.331426
K.L Narayanan, R Rajaraman, M.C Valsakumar, K.G.M Nair, K.P Vijayakumar, Electrical characterization and type conversion in N+ irradiated CdS thin films prepared by chemical bath deposition Materials Research Bulletin. ,vol. 34, pp. 1729- 1734 ,(1999) , 10.1016/S0025-5408(99)00156-7