作者: H. Oyanagi , R. Shioda , Y. Kuwahara , K. Haga
DOI: 10.1107/S0909049595001506
关键词:
摘要: … of the InP(001) surface exposed to AsH 3 flow. The results indicated that ~0.1 monolayer As atoms are … in relation to the As impurities in lnP and the strained InAs monolayer on InP(001). …