Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries

摘要: One of the most severe limits graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used field effect transistors (FETs), and armchair GNR (AGNR) based FETs require atomically precise control edges width. Using tight-binding approach first principles method, we derived proved a general boundary condition for opening significant bandgap ZGNRs with defective edge structures. The proposed semiconducting have some interesting properties one which they can embedded integrated large piece without need to completely cut them out. We also demonstrated new type high-performance all-ZGNR FET. Previous proposals all on AGNRs.