An X-ray photoelectron spectroscopy investigation of the radiation-induced degradation reactions of cellulose nitrate. Part 2—Oxygen plasma induced reactions

作者: R.D Short , H.S Munro , R.J Ward , H.S.O Chan , K.L Tan

DOI: 10.1016/0141-3910(94)90227-5

关键词:

摘要: Abstract Cellulose nitrates were exposed to oxygen glow-discharge plasmas, and etch rates determined. The changes in the surface chemistries of cellulose these plasmas investigated by X-ray photoelectron spectroscopy (XPS). These are discussed terms reactions at that result etching those do not. Etching prepared various nitration routes was compared, effect degree substitution (DOS) on rate investigated.

参考文章(7)
R. G. Poulsen, Plasma etching in integrated circuit manufacture—A review Journal of Vacuum Science and Technology. ,vol. 14, pp. 266- 274 ,(1977) , 10.1116/1.569137
R.D. Short, H.S. Munro, R.J. Ward, I. McBriar, H.S.O. Chan, K.L. Tan, An XPS investigation of the radiation induced degradation reactions of cellulose nitrate: Part 1—Argon plasma induced surface reactions Polymer Degradation and Stability. ,vol. 31, pp. 211- 218 ,(1991) , 10.1016/0141-3910(91)90076-4
MW Geis, JoN Randall, RW Mountain, JD Woodhouse, EI Bromley, DK Astolfi, NP Economou, Nitrocellulose as a positive or negative self-developing resist Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 3, pp. 343- 346 ,(1985) , 10.1116/1.583260
K. Harakawa, Focused ion beam etching of resist materials Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 355- 357 ,(1986) , 10.1116/1.583330
M. W. Geis, J. N. Randall, T. F. Deutsch, P. D. DeGraff, K. E. Krohn, L. A. Stern, Self‐developing resist with submicrometer resolution and processing stability Applied Physics Letters. ,vol. 43, pp. 74- 76 ,(1983) , 10.1063/1.94126
John F Moulder, William F Stickle, Peter E Sobol, Kenneth D Bomben, Handbook of X-Ray Photoelectron Spectroscopy Physical Electronics. pp. 230- 232 ,(1995)