Sulphurisation of gallium-containing thin-film precursors analysed in-situ

摘要: Abstract It has been demonstrated that rapid thermal sulphurisation of sputtered Cu/In precursor layers is suitable for industrial production thin-film photovoltaic modules. The process relatively straightforward and the underlying fundamental aspects, such as phase formation sequence reaction rates, have studied intensively. Using lab-scale preparation technology, incorporation gallium known to improve transport properties absorber enable fabrication wide-gap cells. In this work we used energy dispersive in-situ X-ray diffraction study Cu:Ga/In precursors. basis future development an industrially feasible Cu(In,Ga)S 2 films. Precursor stacking sulphur partial pressure in relation temperature varied. many cases, particular when establishing already at low temperature, observe a severe reduction rates after going from pure Cu Cu:Ga precursor. consequence, single films cannot be prepared within ranges time temperature. Adhesion failure least intermediate CuIn 5 S 8 are other problems frequently encountered. spite these problems, promising pathways precursors now identified.