摘要: Preparation of silicon avalanche photodiodes by a planar method in epitaxial PP+ slices limited charge collection to carriers generated or close the depletion region. Reducing effective size zero-field absorption region surrounding this method, resulted output signal current device reproducing input light pulse shape, within 15 ns. When illuminated with monochromatic radiation, shot noise detector prepared material was less than that observed fabricated homogeneous material, due reduced current.
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