Conduction mechanisms on annealed semi-insulating GaAs samples
作者： M L Peres , A S Chaves , R M Rubinger , V A Chitta , G M Ribeiro
DOI: 10.1088/0268-1242/26/12/125014
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摘要: We have measured electrical resistivity in the range of 100–500 K on six semi-insulating low-temperature grown molecular-beam epitaxy GaAs samples that were exposed to annealing treatment. Samples 2, 3, 4, 5 and 6 annealed with temperatures 350 °C, 400 450 500 °C 550 while sample 1 was not process. used differential activation energy method precisely identify temperature region where different conduction regimes dominate, i.e. band conduction, nearest neighbor hopping variable hopping. will also show change density states impurity caused by significantly alters mechanisms present those samples.
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