Metallinsertion in C‐C‐Bindungen in Lösung
作者： Boris Rybtchinski , David Milstein
DOI: 10.1002/(SICI)1521-3757(19990401)111:7<918::AID-ANGE918>3.0.CO;2-X
关键词:
摘要: Welche Art von Metallzentrum mit Liganden ist notig, um in eine „verdeckte” C-C-Bindung zu inserieren? Wie kann man das fur die C-C-Bindungsaktivierung durch Veranderung der sterischen und elektronischen Eigenschaften beeinflussen, wie sehen moglichen Mechanismen C-C-Aktivierung den verschiedenen Reaktionssystemen aus? Eine systematische Betrachtung verfugbaren Daten zur Losung liefert einige Antworten auf diese Fragen.
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