作者: Diego Sabbagh , Monica De Seta , Luciana Di Gaspare , Johannes Schmidt , Stephan Winnerl
DOI: 10.1109/IRMMW-THZ.2016.7758684
关键词:
摘要: Asymmetric coupled quantum wells in the conduction band of germanium grown on silicon wafers have been investigated by THz pump-THz broadband probe picosecond spectroscopy. The optically-pumped laser gain coefficient is estimated.