Memory element and semiconductor device, and method for manufacturing the same
作者： Yoshiharu Hirakata
DOI:
关键词:
摘要: It is an object to solve inhibition of miniaturization element and complexity a manufacturing process thereof. another provide nonvolatile memory device semiconductor having the device, in which data can be additionally written at time besides forgery caused by rewriting prevented. further inexpensive device. A manufactured first conductive layer, second layer that beside fine particles each surface covered with organic film are deposited over insulating film. The between layer.
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