Silicon solar cells using natural inversion layers found in thermally-oxidized p-silicon

摘要: Abstract Inversion layer silicon solar cells are described which employ the natural inversion occurring at surface of thermally-oxidized p-type as one side an induced n-p junction. Very shallow junctions predicted theoretically with high electric fields in a direction to aid collection carriers generated by light ultra-violet wavelengths. Collection efficiency calculations show cell be less sensitive lifetime and recombination velocity variations than diffused junction cells. Experimental 2 cm × have been fabricated contacted via fine n+ grid overlaid Ni-Cu-Au contact. The contact grid, specially designed minimize effect sheet resistance, produced total shading 16%. Illuminated I-V measurements confirm near ideal, ideality factor A ⋍ 1.05 reverse saturation current approaching that theoretically. Conversion efficiencies 8% obtained, no special precautions being taken reduce series resistance back contact, or reflections front surface.