摘要: We have deposited NiO films by RF sputtering on Al₂O₃/SiO₂/Si and 100 nm-thick Gd doped CeO₂ covered substrates at various Ar/O₂ ratios. The were reduced to form porous Ni thin in 4% H₂ 400℃. For the pure Ar, reduction was retarded due thickness orientation of films. On other hand, oxygen mixed ambient formed after 20 min reduction. also investigated possibility using for single chamber operation studying electrical property fuel/air environment. It is shown that resistance film increases quickly gas environment thus further improvements Ni-base anodes are required them operation.
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