Spatially resolved optical emission and electrical properties of SiH4 RF discharges at 13.56 MHz in a symmetric parallel-plate configuration

摘要: A symmetric capacitively coupled SiH4 radio-frequency discharge at 13.56 MHz is analysed by spatially resolved optical emission spectroscopy and measurements of the RF voltage current ion conduction energy distribution through sheath. transition between two regimes observed, either increasing pressure a constant voltage, or pressure. This attributed to different mechanisms which electrons gain from sheaths in plasma. For gas temperature 200 degrees C, fixed 0.185 Torr, occurs as exceeds 140 V. When comparing both same authors observe drastic change waveform. The power dissipated discharge, well total intensity increases factor 3. Moreover spatial completely modified. These results are discussed relation recent experimental modelling studies discharges.