High density and fast persistent spectral holeburning in II-VI compounds for optical data storage

摘要: High density, photon-gated persistent spectral holeburning is effectuated in rare earth doped II-VI compounds such as MgS, CaS, BaS and SrS. Two-photon ionization of ions performed, selected by a narrow band laser, producing regions reduced absorption (optical holes) the spectrum ion. These holes are useful for applications high density memory (especially, re-writable or photo-erasable memory), holographic memory, communication, etc., demonstrate great survivability over reading cycles, thermal cycles elevated temperatures. The embedment compound matrix comprising polymeric material (such PMMA), prior to effectuation holeburning, may be advantageous many embodiments. Inventive practice has successfully burned two hundred forty photon gated zero phonon line (ZPL) 4f-5d transition Eu2+ magnesium sulfide host. CaS:Eu, CaS:Eu,Sm MgS:Eu among materials which have demonstrated very holes.