Tunable properties of wide-band gap p-type BaCu(Ch1−xChx′)F (Ch = S, Se, Te) thin-film solid solutions
作者： A. Zakutayev , D.H. McIntyre , G. Schneider , R. Kykyneshi , D.A. Keszler
DOI: 10.1016/J.TSF.2010.04.027
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摘要: Abstract Thin-film solid solutions of BaCu(Ch1 − xChx′)F (Ch, Ch′ = S, Se, or Te) wide-band gap p-type semiconductors are obtained by pulsed laser deposition at elevated substrate temperatures from alternating layers BaCuChF and BaCuCh′F. Adjusting the thickness component varies relative chalcogen content, which allows tunability film transparency results in a conductivity change more than three orders magnitude. The physical properties makes these chalcogen-based potentially useful for optoelectronics applications. Lattice parameters calculated using density functional theory agree with those previously reported powders. Deviations Vegard's law observed BaCu(S1 − xSex)F thin films large sulfur content.
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