Enhancement of Schottky barrier height on p-type GaN by (NH4)2Sx treatment
作者： Yow-Jon Lin , Chang-Feng You , Chi-Sen Lee
DOI: 10.1063/1.2175446
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摘要: Barrier height values of Ni contacts to (NH4)2Sx-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led a reduction the depletion layer width p-GaN near interface an increase probability thermionic field emission (TFE). Furthermore, calculated barrier value using TFE model is close Schottky limit, which good agreement with observed result by XPS suggests that (NH4)2Sx surface treatment leads removal native oxides state related oxygen-induced nitrogen-vacancy defects.
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