An alpha immune and ultra low neutron SER high density SRAM

摘要: Terrestrial radiations, such as neutrons or alpha, create charges which, when collected by sensitive memory nodes, can destroy its stored information. Such a failure is called soft error since only the data destroyed while circuit itself not permanently damaged. Today, dimensions and operating voltages of semiconductor devices are continually reduced, intrinsic SRAM sensitivity to ionizing radiations significantly increases. Whereas there linear moderate increase on per Mbit basis, system SER grows up together with amount SRAMs embedded in chips. To meet increasing need for both robust highly integrated SRAMs, an original 3D device has been developed mixing eDRAM capacitors. This cell, named rSRAM/spl trade/ cell (r standing robust), validated through testchip manufactured standard 120 nm CMOS technology.